Defect related luminescence in Hg0.2Cd0.8Te nano- and micro-crystals grown by the solvothermal method

Khatei, Jayakrishna and Pendyala, Naresh Babu and Rao, Koteswara KSR (2010) Defect related luminescence in Hg0.2Cd0.8Te nano- and micro-crystals grown by the solvothermal method. In: Journal of Luminescence, 130 (12). pp. 2512-2515.

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Abstract

The photoluminescence (PL) properties of nano- and micro-crystalline Hg1-xCdxTe (x approximate to 0.8) grown by the solvothermal method have been studied over the temperature range 10-300 K. The emission spectra of the samples excited with 514.5 nm Ar+ laser consist of five prominent bands around 0.56, 0.60, 0.69, 0.78 and 0.92 eV. The entire PL band in this NIR region is attributed to the luminescence from defect centers. The features like temperature independent peak energy and quite sensitive PL intensity, which has a maximum around 50 K is illustrated by the configuration coordinate model. After 50 K, the luminescence shows a thermal quenching behavior that is usually exhibited by amorphous semiconductors, indicating that the defects are related to the compositional disorder. (C) 2010 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	Journal of Luminescence
Publisher:	Elsevier Science B.V.
Additional Information:	Copyright of this article belongs to Elsevier Science B.V.
Keywords:	Defects; Solvothermal; MCT; Photoluminescence
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	08 Dec 2010 11:22
Last Modified:	08 Dec 2010 11:22
URI:	http://eprints.iisc.ac.in/id/eprint/34312

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