Analytical modeling of quantum threshold voltage for triple gate MOSFET

Kumar, Rakesh P and Mahapatra, Santanu (2010) Analytical modeling of quantum threshold voltage for triple gate MOSFET. In: Solid-State Electronics, 54 (12). pp. 1586-1591.

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Abstract

In this work a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrodinger equation Proposed model is extended for short channel devices by including semi-empirical correction The impact of effective mass variation with film thicknesses is also discussed using the proposed model All models are fully validated against the professional numerical device simulator for a wide range of device geometries (C) 2010 Elsevier Ltd All rights reserved

Item Type:	Journal Article
Publication:	Solid-State Electronics
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	Compact modeling; Quantum threshold voltage; MOSFET; Device simulation
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Dec 2010 09:06
Last Modified:	07 Dec 2010 09:06
URI:	http://eprints.iisc.ac.in/id/eprint/34301

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