Pandian, Velayuthan and Mohapatra, Yashowanta N and Kumar, Vikram (1991) Silver- and Gold-Related Deep Levels in Gallium Arsenide. In: Japanese Journal of Applied Physics, 30 (11A). 2815 -2818.
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Characterization of silver- and gold-related defects in gallium arsenide is carried out. These impurities were introduced during the thermal diffusion process and the related defects are characterized by deep-level transient spectroscopy and photoluminescence. The silver-related center in GaAs shows a 0.238 eV photoluminescence line corresponding to no-phonon transition, whereas its thermal ionization energy is found to be 0.426 eV. The thermal activation energy of the gold-related center in GaAs is 0.395 eV, but there is no corresponding luminescence signal.
| Item Type: | Journal Article |
|---|---|
| Publication: | Japanese Journal of Applied Physics |
| Publisher: | Institute of Pure and Applied Physics |
| Additional Information: | Copyright of this article belongs to Institute of Pure and Applied Physics. |
| Keywords: | Deep Levels;Dlts;Photoluminescence;Liquid Phase Epitaxy; Gaas;Silver;Gold. |
| Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
| Date Deposited: | 30 Nov 2010 09:33 |
| Last Modified: | 05 Nov 2018 10:24 |
| URI: | http://eprints.iisc.ac.in/id/eprint/34131 |
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