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A Non Quasi-Static Small Signal Model for Long Channel Symmetric DG MOSFET

Sarkar, Sudipta and Roy, Ananda S and Mahapatra, Santanu (2010) A Non Quasi-Static Small Signal Model for Long Channel Symmetric DG MOSFET. In: 23rd International Conference on VLSI Design/9th International Conference on Embedded Systems, JAN 03-07, 2010, Bangalore, India, pp. 21-26.

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We propose a compact model for small signal non quasi static analysis of long channel symmetric double gate MOSFET The model is based on the EKV formalism and is valid in all regions of operation and thus suitable for RF circuit design Proposed model is verified with professional numerical device simulator and excellent agreement is found well beyond the cut-off frequency

Item Type: Conference Paper
Publisher: IEEE
Additional Information: Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Non Quasi-Static Analysis; Double-Gate MOSFET
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 29 Nov 2010 11:31
Last Modified: 29 Nov 2010 11:31
URI: http://eprints.iisc.ac.in/id/eprint/34070

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