Anisotropic properties of the layered semiconductor in Te

Pal, S and Bose, DN and Asokan , S and Gopal, ESR (1991) Anisotropic properties of the layered semiconductor in Te. In: Solid State Communications, 80 (9). pp. 753-756.

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Abstract

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier science
Additional Information:	Copyright of this article belongs to Elsevier science.
Keywords:	High-Pressure.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	11 Nov 2010 06:35
Last Modified:	11 Nov 2010 06:35
URI:	http://eprints.iisc.ac.in/id/eprint/33625

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