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Two-stage photoquenching in semi-insulating GaAs:EL2

Pandian, V and Kumaran, V (1991) Two-stage photoquenching in semi-insulating GaAs:EL2. In: Journal of Applied Physics, 70 (9). 5114 -5116 .

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The photoquenching of EL2 in semi‐insulating gallium arsenide is seen to be a complex process, where at low temperatures the initial slow quenching is followed by a switch to fast quenching. A possible explanation involving lattice strain mediated cooperative structural relaxation arising out of transition to the metastable state is proposed.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 09 Nov 2010 10:59
Last Modified: 09 Nov 2010 10:59
URI: http://eprints.iisc.ac.in/id/eprint/33591

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