Two-stage photoquenching in semi-insulating GaAs:EL2

Pandian, V and Kumaran, V (1991) Two-stage photoquenching in semi-insulating GaAs:EL2. In: Journal of Applied Physics, 70 (9). 5114 -5116 .

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Abstract

The photoquenching of EL2 in semi‐insulating gallium arsenide is seen to be a complex process, where at low temperatures the initial slow quenching is followed by a switch to fast quenching. A possible explanation involving lattice strain mediated cooperative structural relaxation arising out of transition to the metastable state is proposed.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	09 Nov 2010 10:59
Last Modified:	09 Nov 2010 10:59
URI:	http://eprints.iisc.ac.in/id/eprint/33591

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