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Protection of Insulated Gate Bipolar Transistors against Short Circuit

Narayanan, G and Muralidhara, SR and Anand, AS and Ramanarayanan, V (2000) Protection of Insulated Gate Bipolar Transistors against Short Circuit. In: Journal of the Indian Institute of Science .

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Insulated Gate Bipolar Transistors (IGBT's) are widely used in power electronic converters. Two IGBT gate drive circuits, capable of protecting the devices against short circuit by sensing their collector-emitter voltage, are developed for low voltage devices. One uses discrete components, while the other uses an IC driver MC33153. These circuits are simple, reliable and useful for practising engineers. Both the circuits are tested thoroughly for their ability to protect the devices against both types of faults, namely Hard Switched Fault (HSF) and Fault Under Load (FUL), under different circuit conditions. The test results bring out the influence of DC bus voltage and fault inductance on the short circuit transients. From this a method can be arrived at for estimating the fault inductance using the device current and the device voltage under fault. The overvoltage spikes due to shut down following fault detection are quite low. This vindicates the design of the low stray inductance bus-bar used. A simple gate drive circuit capable of short circuit protection and a sandwich bus-bar with low parasitic inductance hold the key to improve the reliability of IGBT-based converters

Item Type: Journal Article
Publication: Journal of the Indian Institute of Science
Publisher: Indian Institute of Science
Keywords: Insulated Gate Bipolar Transistor, protection, short circuit currents
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 03 Nov 2021 09:14
Last Modified: 03 Nov 2021 09:14
URI: http://eprints.iisc.ac.in/id/eprint/33501

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