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Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy

Kumari, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhib, SB (2010) Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy. In: Advanced Science Letters, 3 (4). pp. 379-384.

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InN quantum dots (QDs) were fabricated on Si(111) substrate by droplet epitaxy using an RF plasma-assisted MBE system. Variation of the growth parameters, such as growth temperature and deposition time, allowed us to control the characteristic size and density of the QDs. As the growth temperature was increased from 100 C to 300 degrees C, an enlargement of QD size and a drop in dot density were observed, which was led by the limitation of surface diffusion of adatoms with the limited thermal energy. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to assess the QDs size and density. The chemical bonding configurations of InN QDs were examined by X-ray photo-electron spectroscopy (XPS). Fourier transform infrared (FTIR) spectrum of the deposited InN QDs shows the presence of In-N bond. Temperature-dependent photoluminescence (PL) measurements showed that the emission peak energies of the InN QDs are sensitive to temperature and show a strong peak emission at 0.79 eV.

Item Type: Journal Article
Publication: Advanced Science Letters
Publisher: American Scientific Publishers
Additional Information: Copyright of this article belongs to American Scientific Publishers.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 11 Oct 2010 05:47
Last Modified: 11 Oct 2010 05:47
URI: http://eprints.iisc.ac.in/id/eprint/33155

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