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Neutralization of phosphorus in polycrystalline silicon by hydrogenation

Narayanan, Sankara EM and Annamalai, S and Sarma, GH and Iyer, Suman B and Kumar, Vikram (1988) Neutralization of phosphorus in polycrystalline silicon by hydrogenation. In: Journal of Applied Physics, 63 (8). pp. 2867-2868.

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Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus‐doped polycrystalline films.

Item Type: Editorials/Short Communications
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 23 Sep 2010 09:42
Last Modified: 23 Sep 2010 09:42
URI: http://eprints.iisc.ac.in/id/eprint/32398

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