Narayanan, Sankara EM and Annamalai, S and Sarma, GH and Iyer, Suman B and Kumar, Vikram (1988) Neutralization of phosphorus in polycrystalline silicon by hydrogenation. In: Journal of Applied Physics, 63 (8). pp. 2867-2868.
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Official URL: http://jap.aip.org/resource/1/japiau/v63/i8/p2867_...
Abstract
Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus‐doped polycrystalline films.
| Item Type: | Editorials/Short Communications |
|---|---|
| Publication: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| Additional Information: | Copyright of this article belongs to American Institute of Physics. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 23 Sep 2010 09:42 |
| Last Modified: | 23 Sep 2010 09:42 |
| URI: | http://eprints.iisc.ac.in/id/eprint/32398 |
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