Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET

Sarkar, Sudipta and Roy, Ananda S and Mahapatra, Santanu (2010) Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET. In: Solid-State Electronics, 54 (11). pp. 1421-1429.

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Abstract

We propose a unified model for large signal and small signal non-quasi-static analysis of long channel symmetric double gate MOSFET. The model is physics based and relies only on the very basic approximation needed for a charge-based model. It is based on the EKV formalism Enz C, Vittoz EA. Charge based MOS transistor modeling. Wiley; 2006] and is valid in all regions of operation and thus suitable for RF circuit design. Proposed model is verified with professional numerical device simulator and excellent agreement is found. (C) 2010 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	Solid-State Electronics
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	Non-quasi-static (NQS); Double gate (DG); Large signal; Small signal; Compact modeling.
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	20 Sep 2010 09:43
Last Modified:	20 Sep 2010 09:57
URI:	http://eprints.iisc.ac.in/id/eprint/32242

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