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Ferroelectricity in DTAAP

Shashikala, MN and Sangunni, KS and Bhat, HL (1988) Ferroelectricity in DTAAP. In: Ferroelectrics Letters Section, 9 (1). pp. 19-25.

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The results of dielectric studies of deuterated TAAP grown at different temperatures are reported. These results together with the Raman spectral data show that 100% deuteration is possible only if the crystals are grown at low temperatures. The transition temperature continuously increases with increasing deuterium content from 45°C for TAAP to ∼ 87°C for DTAAP indicating that hydrogen bonds play an important role in the ferroelectric transition of this crystal.

Item Type: Journal Article
Publication: Ferroelectrics Letters Section
Publisher: Taylor and Francis Group
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 30 Aug 2010 09:47
Last Modified: 30 Aug 2010 09:47
URI: http://eprints.iisc.ac.in/id/eprint/31574

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