I–U Characteristics of MOS Structures on Polycrystalline Silicon

Lakshmi, MVS and Ramkumar, K (1989) I–U Characteristics of MOS Structures on Polycrystalline Silicon. In: Physica Status Solidi A, 111 (2). 667 -674.

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Abstract

Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U)-Charakteristiken von MOS-Strukturen auf polykristallinem Silizium untersucht. Ein Modell zur Erklärung der I–U-Charakteristiken wird beschrieben, das auf dem Ladungstransport über Oxidtraps beruht.

Item Type:	Journal Article
Publication:	Physica Status Solidi A
Publisher:	John Wiley and Sons
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	19 Aug 2010 12:22
Last Modified:	19 Sep 2010 06:14
URI:	http://eprints.iisc.ac.in/id/eprint/31478

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