Rao, MS and Moss, RH and Faktor, MM (1978) A Method for Purifying Bulk Gallium Arsenide by Chemical Vapour Transport. In: Indian Journal of Pure & Applied Physics, 16 (9). pp. 805-809.
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The need for high purity materials for the growth of epitaxial layers of GaAs and the limitations of present source materials are discussed. A for purifying bulk quantitites of GaAs using chemical vapour transport is presented. GaAs is contained in a silica capsule which has a small orifice allow movement of gas between inside and outside. The capsule is contained in a heated tube and hydrogen chloride is used as the transporting agent. Growth rates of 0.1 g/h have been obtained and evidence for the purification is presented along with a discussion of the principles involved. The potentialities of the method for both purification and for the growth of single crystal substrate material are stressed.--AA
| Item Type: | Journal Article |
|---|---|
| Publication: | Indian Journal of Pure & Applied Physics |
| Publisher: | National Institute of Science Communication and Information Resources |
| Additional Information: | Copyright of this article belongs to National Institute of Science Communication and Information Resources. |
| Department/Centre: | Division of Chemical Sciences > Inorganic & Physical Chemistry |
| Date Deposited: | 23 Aug 2010 12:13 |
| Last Modified: | 23 Aug 2010 12:13 |
| URI: | http://eprints.iisc.ac.in/id/eprint/31422 |
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