Natarajan, K and Ramkumar, K and Satyam, M (1989) Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size. In: Journal of Applied Physics, 66 (5). pp. 2206-2208.
![[img]](http://eprints.iisc.ac.in/style/images/fileicons/application_pdf.png) |
PDF
break.pdf - Published Version Restricted to Registered users only Download (284kB) | Request a copy |
Official URL: http://jap.aip.org/japiau/v66/i5/p2206_s1
Abstract
This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.
| Item Type: | Editorials/Short Communications |
|---|---|
| Publication: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| Additional Information: | Copyright of this article belongs to American Institute of Physics. |
| Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 09 Aug 2010 06:48 |
| Last Modified: | 19 Sep 2010 06:13 |
| URI: | http://eprints.iisc.ac.in/id/eprint/31172 |
Actions (login required)
 |
View Item |
