Reddy, Babu JN and Bhat, HL and Elizabeth, Suja (2010) Polarization switching in near-stoichiometric Zn:LiNbO3 at high temperatures. In: Solid State Communications, 150 (27-28). pp. 1258-1261.
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Abstract
The effect of temperature and stoichiometry on the polarization switching rate in lithium niobate is presented. An increased polarization switching rate in congruent and near-stoichiometric lithium niobate (CLN and SLN) and SLN doped with 1.6 mol% Zn (SLN:Zn(1.6)) is observed using a pulsed field switching technique near the transition temperature (TO. Compared to CLN, the observed switching rate and domain wall mobility for SLN and SLN:Zn(1.6) are higher. The extra charge flow was observed during switching at high temperatures,and is attributed to the creation of defect dipoles and increase in ionic conductivity. Forward domain motion is expected to be the mechanism involved in switching. (C) 2010 Elsevier Ltd. All rights reserved.
Item Type: | Journal Article |
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Publication: | Solid State Communications |
Publisher: | Elsevier Science |
Additional Information: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Ferroelectric crystals;Polarization switching;Stoichiometric lithium niobate. |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 09 Aug 2010 06:47 |
Last Modified: | 19 Sep 2010 06:13 |
URI: | http://eprints.iisc.ac.in/id/eprint/31025 |
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