Mangalam, RVK and Ranjith, R and Iyo, A and Sundaresan, A and Krupanidhi, SB and Rao, CNR (2006) Ferroelectricity in Bi26-xMxO40-delta (M = Al and Ga) with the gamma-Bi2O3 structure. In: Solid State Communications, 140 (1). pp. 42-44.
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Abstract
We report on the dielectric proper-ties of bismuth aluminate and gallate with Bi:AI(Ga) ratio of 1: 1 and 12:1 prepared at high temperature and ambient pressure. These compounds crystallize in a noncentrosymmetric body-centered cubic structure (space group 123) with a similar to 10.18 angstrom rather than in the perovskite structure.This cubic phase is related to the gamma-Bi2O3 structure which has the actual chemical formula Bi-24(3+) (Bi3+Bi5+)O40-delta. In the aluminates and gallates studied by us, the Al and Ga ions are distributed over the 24f and 2a sites. These compounds exibit ferroclectric hysteresis at room temperature with a weak polarization. (c) 2006 Elsevier Ltd. All rights reserved.
Item Type: | Journal Article |
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Publication: | Solid State Communications |
Publisher: | Elsevier Science |
Additional Information: | Copyright of this article belongs to Elsevier Science. |
Keywords: | A.Ferroelectrics; C.X-ray scattering; D.Dielectric response. |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 01 Sep 2010 08:51 |
Last Modified: | 19 Sep 2010 06:12 |
URI: | http://eprints.iisc.ac.in/id/eprint/30930 |
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