Field-induced dielectric properties of laser ablated antiferroelectric $(Pb_0_._9_9Nb_0_._0_2)(Zr_0_._5_7Sn_0_._3_8Ti_0_._0_5)_0_._9_8O_3$ thin films

Bharadwaja, SSN and Krupanidhi, SB (2000) Field-induced dielectric properties of laser ablated antiferroelectric $(Pb_0_._9_9Nb_0_._0_2)(Zr_0_._5_7Sn_0_._3_8Ti_0_._0_5)_0_._9_8O_3$ thin films. In: Applied Physics Letters, 77 (25). pp. 4208-4210.

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Abstract

Niobium-modified lead zirconate stannate titanate antiferroelectric thin films with the chemical composition of $(Pb_0_._9_9Nb_0_._0_2)(Zr_0_._5_7Sn_0_._3_8Ti_0_._0_5)_0_._9_8O_3$ were deposited by pulsed excimer laser ablation technique on Pt-coated Si substrates. Field-induced phase transition from antiferroelectric to ferroelectric properties was studied at different fields as a function of temperature. The field forced ferroelectric phase transition was elucidated by the presence of double-polarization hysteresis and double-butterfly characteristics from polarization versus applied electric field and capacitance and voltage measurements, respectively. The measured forward and reverse switching fields were 25 kV/cm and 77 kV/cm, respectively. The measured dielectric constant and dissipation factor were 540 and 0.001 at 100 kHz, respectively, at room temperature.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright for this article belongs to American Institute of Physics (AIP).
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	12 Apr 2005
Last Modified:	19 Sep 2010 04:18
URI:	http://eprints.iisc.ac.in/id/eprint/3066

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