Natarajan, K and Ramkumar, K and Satyam, M (1989) Reverse characteristics of phosphorous passivated polysilicon p-n junction diodes. In: Physica Status Solidi A, 115 (2). K265-K268.
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Official URL: http://www3.interscience.wiley.com/journal/1124316...
Item Type: | Editorials/Short Communications |
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Publication: | Physica Status Solidi A |
Publisher: | John Wiley and Sons |
Additional Information: | Copyright of this article belongs to John Wiley and Sons. |
Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
Date Deposited: | 16 Jul 2010 08:44 |
Last Modified: | 19 Sep 2010 06:11 |
URI: | http://eprints.iisc.ac.in/id/eprint/30325 |
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