Dobal, PS and Katiyar, RS and Bharadwaja, SSN and Krupanidhi, SB (2001) Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films. In: Applied Physics Letters, 78 (12). pp. 1730-1732.
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Abstract
Antiferroelectric materials are found to be good alternative material compositions for high-charge-storage devices and transducer applications. Lead zirconate (PZ) is a room-temperature antiferroelectric material. The antiferroelectric nature of PZ thin films was studied over a temperature range of 24-300°C, in terms of Raman scattering, dielectric constant, and polarization. Temperature-dependent dielectric and polarization studies indicated a nonabrupt phase transition. To alleviate the extrinsic effects influencing the phase transition behavior, Raman scattering studies were done on laser-ablated PZ thin films as a function of temperature and clear phase transformations were observed.
Item Type: | Journal Article |
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Publication: | Applied Physics Letters |
Publisher: | American Institute of Physics |
Additional Information: | Copyright for this article belongs to American Institute of Physics (AIP). |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 31 Mar 2005 |
Last Modified: | 19 Sep 2010 04:18 |
URI: | http://eprints.iisc.ac.in/id/eprint/2981 |
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