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On photooxidation of Ge in obliquely deposited Ge and Ge25X75(X = S, Se, Te) thin films

Harshavardhan, Solomon K and Hegde, MS (1989) On photooxidation of Ge in obliquely deposited Ge and Ge25X75(X = S, Se, Te) thin films. In: Solid State Communications, 69 (1). pp. 117-120.

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Official URL: http://dx.doi.org/10.1016/0038-1098(89)90039-2


It has been established by photoemission studies that Ge in obliquely deposited pure Ge and Ge-chalcogenide thin films undergoes predominant photooxidation when irradiated with band gap photons. The role of Ge appears to be that of providing a highly porous low density microstructure and photooxidation seems to be a direct consequence of such large scale porosity in these films. The formation of low vapour pressure oxide fractions of Ge and Te and volatile high vapour pressure oxide fractions of S and Se is responsible for anomalous photoinduced transformations in these films.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 14 Jul 2010 10:48
Last Modified: 19 Sep 2010 06:11
URI: http://eprints.iisc.ac.in/id/eprint/29284

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