Electron-hole recombination in cobalt-doped p-type germanium

Susila, G and Suryan, G (1971) Electron-hole recombination in cobalt-doped p-type germanium. In: Journal of Physics and Chemistry of Solids, 32 (7). pp. 1463-1470.

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Abstract

The recombination properties of cobalt centers in p-type germanium containing cobalt in the concentration range 1014 to 1016 atoms/cm3 have been investigated. The measurement of lifetime has been carried out by steady-state photoconductivity and photo-magneto-electric methods in the temperature range 145 to 300°K. The cross-sections Sno (electron capture cross-section at neutral centers). Sn- (electron capture cross-section at singly negatively charged centers) and their temperature variations have been estimated by the analysis of the lifetime data on the basis of Sah-Shockley's multi-level formula. The value of Sno is (15±5).10-16 cm2 and is temperature independent. The value of Sn- is ≈4·10-16 cm2 around 225°K and it increases with increase of temperature. The possible mechanisms for capture at neutral and repulsive centers are discussed and a summary of the capture cross-sections for cobalt centers is given. A comparison of the cross-section values of cobalt and their temperature variations with those of the related impurities-manganese, iron and nickel-in germanium has been made.

Item Type:	Journal Article
Publication:	Journal of Physics and Chemistry of Solids
Publisher:	Elsevier B.V
Additional Information:	Copyright of this article belongs to Elsevier B.V.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	11 Jun 2010 10:05
Last Modified:	19 Sep 2010 06:08
URI:	http://eprints.iisc.ac.in/id/eprint/28301

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