Mahadevan, S and Suryan, G (1968) Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region. In: Physics Letters A, 27 (3). pp. 149-150.
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Official URL: http://dx.doi.org/10.1016/0375-9601(68)91175-4
Abstract
Results of measurements at a high frequency on reverse bias capacitance of copper-doped germanium junctions are reported. Phenomenal increase in capacitance is found in the breakdown region, particularly at low temperatures.
| Item Type: | Journal Article |
|---|---|
| Publication: | Physics Letters A |
| Publisher: | Elsevier Science |
| Additional Information: | Copyright of this article belongs to Elsevier Science. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 21 May 2010 10:18 |
| Last Modified: | 19 Sep 2010 06:06 |
| URI: | http://eprints.iisc.ac.in/id/eprint/27730 |
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