Mahadevan, Sudha (1969) Reactive characteristics of narrow germanium p-n junctions in the breakdown region. In: Solid State Electronics, 12 (2). pp. 119-121.
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Official URL: http://dx.doi.org/10.1016/0038-1101(69)90120-8
Abstract
An inductive behaviour observed in germanium p-n junctions in the breakdown region is reported.
Item Type: | Journal Article |
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Publication: | Solid State Electronics |
Publisher: | Elsevier Science |
Additional Information: | Copyright of this article belongs to Elsevier Science. |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 17 May 2010 06:10 |
Last Modified: | 19 Sep 2010 06:05 |
URI: | http://eprints.iisc.ac.in/id/eprint/27655 |
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