Electrical properties of silicon nitride films prepared by electron cyclotron resonance assisted sputter deposition

Vargheese, Deenamma K and Rao, Mohan G (2001) Electrical properties of silicon nitride films prepared by electron cyclotron resonance assisted sputter deposition. In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19 (5). 2122 -2126.

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Abstract

Silicon nitride films have been deposited using electron cyclotron resonance (ECR) plasma-assisted rf sputter deposition. Variation in composition and electrical properties of the deposited films has been studied. Films with specific resistivity of $10^1^3$ \Omega cm and a dielectric constant of 7 have been obtained at a ECR power of 100 W (corresponding to an ion flux of $1X10^1^0 cm^-^3$). These films exhibited minimum interface density of $2X10^1^0 eV^-^1 cm^-^2$ and have a critical field of 5 MV/cm. Detailed electrical characterization of the films has been carried out to study the variation of interface density with ECR power and to identify the conduction mechanism.

Item Type:	Journal Article
Publication:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Publisher:	American Vacuum Society
Additional Information:	Copyright for this article belongs to American Vacuum Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	05 Apr 2005
Last Modified:	19 Sep 2010 04:18
URI:	http://eprints.iisc.ac.in/id/eprint/2741

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