'Wet N2O oxidation' process and interface state density characterization of nanoscale nitrided SiO2 for flash memory application

Bhat, KN and Naseer, Babu P (2007) 'Wet N2O oxidation' process and interface state density characterization of nanoscale nitrided SiO2 for flash memory application. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 17-20, 2007, Mumbai.

PDF getPDF.pdf - Published Version Restricted to Registered users only Download (161kB) | Request a copy

Abstract

In this paper we first present the 'wet N2O' furnace oxidation process to grow nitrided tunnel oxides in the thickness range 6 to 8 nm on silicon at a temperature of 800 degrees C. Electrical characteristics of MOS capacitors and MOSFETs fabricated using this oxide as gate oxide have been evaluated and the superior features of this oxide are ascertained The frequency response of the interface states, before and after subjecting the MOSFET gate oxide to constant current stress, is studied using a simple analytical model developed in this work.

Item Type:	Conference Paper
Publisher:	IEEE
Additional Information:	Copyright 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	10 Jun 2010 09:39
Last Modified:	13 Oct 2011 07:06
URI:	http://eprints.iisc.ac.in/id/eprint/26570

Actions (login required)

View Item