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Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption

Ivanova, ZG and Aneva, Z and Ganesan, R and Tonchev, D and Gopal, ESR and Rao, KSRK and Allen, TW and DeCorby, RG and Kasap, SO (2007) Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption. In: 15th International Symposium on Non-Oxide Glasses and New Optical Glasses, APR 10-14, 2006, ndian Inst Sci, Bangalore.

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The photoluminescence (PL) of a series of (GeS2)(80)(Ga2S3)(20) glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2 K has been studied. The influence of the temperature on the emission cross-section of the PL bands at -> 1540, 980 and 820 nm under host excitation has been defined. A quenching effect of the host photoluminescence has been established from the compositional dependence of the PL intensity. It has been found that the present Er3+-doped Ge-S-Ga glasses posses PL lifetime values about 3.25 ms. (C) 2007 Elsevier B.V. All rights reserved.

Item Type: Conference Paper
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 25 Mar 2010 06:17
Last Modified: 19 Sep 2010 05:57
URI: http://eprints.iisc.ac.in/id/eprint/26310

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