Investigations on magnetron sputtered ZnO thin films and Au/ZnO Schottky diodes

Dhananjay, * and Nagaraja, J and Krupanidhi, SB (2007) Investigations on magnetron sputtered ZnO thin films and Au/ZnO Schottky diodes. In: Physica B: Condensed Matter, 391 (2). pp. 344-349.

PDF el.pdf - Published Version Restricted to Registered users only Download (171kB) | Request a copy

Abstract

Magnetron sputtering is a promising technique for the growth of oxide materials including ZnO, which allows deposition of films at low temperatures with good electrical properties. The current-voltage (I-P) characteristics of An Schottky contacts on magnetron sputtered ZnO, films have been measured over a temperature range of 278-358K. Both effective barrier height (phi(B,eff)) and ideality factor (n) are found to be a function of temperature, and this behavior has been interpreted on the basis of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the interface. Density of states (DOS) near the Fermi level is determined using a model based on the space charge limited current (SCLC). The dispersion in both real and imaginary parts of the dielectric constant at low frequencies, with increase in temperature is attributed to the space charge effect. Complex impedance plots exhibited two semicircles, which corresponds to bulk grains and the grain boundaries. (c) 2006 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	Physica B: Condensed Matter
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	30 Mar 2010 11:46
Last Modified:	05 Mar 2019 09:14
URI:	http://eprints.iisc.ac.in/id/eprint/26273

Actions (login required)

View Item