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Implantation Induced Hardening of Nanocrystalline Titanium Thin Films

Krishnan, R and Amirthapandian, S and Mangamma, G and Ramaseshan, R and Dash, S and Tyagi, AK and Jayaram, V and Raj, Baldev (2009) Implantation Induced Hardening of Nanocrystalline Titanium Thin Films. In: International Conference on Nanoscience and Technology, FEB 27-29, 2008, Chennai.

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Formation of nanocrystalline TiN at low temperatures was demonstrated by combining Pulsed Laser Deposition (PLD) and ion implantation techniques. The Ti films of nominal thickness similar to 250 nm were deposited at a substrate temperature of 200 degrees C by ablating a high pure titanium target in UHV conditions using a nanosecond pulsed Nd:YAG laser operating at 1064 nm. These films were implanted with 100 keV N+ ions with fluence ranging from 1.0 x 10(16) ions/cm(2) to 1.0 x 10(17) ions/cm(2). The structural, compositional and morphological evolutions were tracked using Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS) and Atomic Force Microscopy (AFM), respectively. TEM analysis revealed that the as-deposited titanium film is an fcc phase. With increasing ion fluence, its structure becomes amorphous phase before precipitation of nanocrystalline fcc TiN phase. Compositional depth profiles obtained from SIMS have shown the extent of nitrogen concentration gradient in the implantation zone. Both as-deposited and ion implanted films showed much higher hardness as compared to the bulk titanium. AFM studies revealed a gradual increase in surface roughness leading to surface patterning with increase in ion fluence.

Item Type: Conference Paper
Publisher: American Scientific Publishers
Additional Information: Copyright of this article belongs to American Scientific Publishers.
Keywords: Titanium Thin Films; PLD; Micro-Hardness; Ion Implantation
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 09 Mar 2010 07:15
Last Modified: 09 Mar 2010 07:15
URI: http://eprints.iisc.ac.in/id/eprint/26049

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