Panchokarla, LS and Subrahmanyam, KS and Saha, SK and Govindaraj, Achutharao and Krishnamurthy, HR and Waghmare, UV and Rao, CNR (2009) Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene. In: Advanced Materials, 21 (46). 4726- 4730.
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Abstract
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
| Item Type: | Journal Article |
|---|---|
| Publication: | Advanced Materials |
| Publisher: | Wiley interscience |
| Additional Information: | Copyright for this article belongs to Wiley interscience. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 19 Jan 2010 08:59 |
| Last Modified: | 19 Sep 2010 05:54 |
| URI: | http://eprints.iisc.ac.in/id/eprint/25440 |
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