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Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene

Panchokarla, LS and Subrahmanyam, KS and Saha, SK and Govindaraj, Achutharao and Krishnamurthy, HR and Waghmare, UV and Rao, CNR (2009) Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene. In: Advanced Materials, 21 (46). 4726- 4730.

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Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.

Item Type: Journal Article
Publication: Advanced Materials
Publisher: Wiley interscience
Additional Information: Copyright for this article belongs to Wiley interscience.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Jan 2010 08:59
Last Modified: 19 Sep 2010 05:54
URI: http://eprints.iisc.ac.in/id/eprint/25440

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