ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

The composition dependence of electrical switching behavior of Ge7Se93-xSbx glasses

Madhu, BJ and Jayanna, HS and Asokan, S (2009) The composition dependence of electrical switching behavior of Ge7Se93-xSbx glasses. In: Journal of Non-Crystalline Solids, 355 (52-54). pp. 2630-2633.

[img] PDF
2.pdf - Published Version
Restricted to Registered users only

Download (313kB) | Request a copy
Official URL: http://www.sciencedirect.com/science?_ob=ArticleUR...


Bulk Ge7Se93-xSbx (21 <= x <= 32) glasses are prepared by melt quenching method and electrical switching studies have been undertaken on these samples to elucidate the type of switching and the composition and thickness dependence of switching voltages. On the basis of the compressibility and atomic radii, it has been previously observed that Se-based glasses exhibit memory switching behavior. However, the present results indicate that Ge7Se93-xSbx glasses exhibit threshold type electrical switching with high switching voltages. Further, these samples are found to show fluctuations in the current-voltage (I-V) characteristics. The observed threshold behavior of Ge7Se93-xSbx glasses has been understood on the basis of larger atomic radii and lesser compressibilities of Sb and Ge. Further. the high switching voltages and fluctuations in the I-V characteristics of Ge-Se-Sb samples can be attributed to the high resistance of the samples and the difference in thermal conductivities of different structural units constituting the local structure of these glasses. The switching voltages of Ge7Se93-xSbx glasses have been found to decrease with the increase in the Sb concentration. The observed composition dependence of switching voltages has been understood on the basis of higher metallicity of the Sb additive and also in the light of the Chemically Ordered Network (CON) model. Further, the thickness dependence of switching voltages has been studied to reassert the mechanism of switching.

Item Type: Journal Article
Publication: Journal of Non-Crystalline Solids
Publisher: Elsevier Science
Additional Information: Copyright for this article belongs to Elsevier Science.
Keywords: Chalcogenides; High field effects
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 05 Jan 2010 10:54
Last Modified: 19 Sep 2010 05:54
URI: http://eprints.iisc.ac.in/id/eprint/25333

Actions (login required)

View Item View Item