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Ellipsometric study of Atomic Layer Deposited TiO2 thin films

Jaiswal, Piyush and Kunte, GV and Umarji, AM and Shivashankar, SA (2009) Ellipsometric study of Atomic Layer Deposited TiO2 thin films. In: International Conference on Transport and Optical Properties of Nanomaterials (ICTOPON 2009), JAN 05-08, 2009, Allahabad, INDIA, pp. 396-401.

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Atomic layer deposition was used to obtain TiO2 thin films on Si (100) and fused quartz, using a novel metal organic precursor. The films were grown at 400 degrees C, varying the amount of oxygen used as the reactive gas. X-ray diffraction showed the films to be crystalline, with a mixture of anatase and rutile phases. To investigate their optical properties, ellipsometric measurements were made in the UV-Vis-NIR range (300-1700 nm). Spectral distribution of various optical constants like refractive index (n), absorption index (k), transmittance (T), reflectance (R), absorption (A) were calculated by employing Bruggemann's effective medium approximation (BEMA) and Maxwell-Garnet effective medium approximation, in conjunction with the Cauchy and Forouhi-Bloomer (FB) dispersion relations. A layered optical model has been proposed which gives the thickness, elemental and molecular composition, amorphicity and roughness (morphology) of the TiO2 film surface and and the film/substrate interface, as a function of oxygen flow rate The spectral distribution of the optical band gap (E-g(opt)), complex dielectric constants (epsilon' and epsilon''), and optical conductivity (sigma(opt)), has also been determined.

Item Type: Conference Paper
Series.: AIP Conference Proceedings
Publisher: American Institute of physics
Additional Information: Copyright for this article belongs to American Institute of physics.
Keywords: Atomic Layer Deposition; TiO2; Ellipsometry
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 10 Dec 2009 09:37
Last Modified: 10 Dec 2009 09:37
URI: http://eprints.iisc.ac.in/id/eprint/24829

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