Drift mobility of holes in single-crystal beta-AgI

Govindacharyulu, PA and Bose, DN (1977) Drift mobility of holes in single-crystal beta-AgI. In: Journal of Applied Physics, 48 (3). pp. 1381-1382.

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Abstract

The drift mobility of photoexcited holes in single-crystal beta-AgI has been measured between 260 and 312 °K. In this range the drift mobility µd increased with temperature due to trap-limited behavior. At 300 °K µd=12 cm2/V sec, the concentration and energy of the dominant traps being given by Nt=3×109 to 5×109/cm3 and Et=0.52 to 0.50 eV, respectively. Electron drift mobilities could not be determined due to low electron lifetimes. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	28 Jan 2010 09:41
Last Modified:	19 Sep 2010 05:51
URI:	http://eprints.iisc.ac.in/id/eprint/24640

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