ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Drift mobility of holes in single-crystal beta-AgI

Govindacharyulu, PA and Bose, DN (1977) Drift mobility of holes in single-crystal beta-AgI. In: Journal of Applied Physics, 48 (3). pp. 1381-1382.

[img] PDF
11.pdf - Published Version
Restricted to Registered users only

Download (174kB) | Request a copy
Official URL: http://scitation.aip.org/getabs/servlet/GetabsServ...


The drift mobility of photoexcited holes in single-crystal beta-AgI has been measured between 260 and 312 °K. In this range the drift mobility µd increased with temperature due to trap-limited behavior. At 300 °K µd=12 cm2/V sec, the concentration and energy of the dominant traps being given by Nt=3×109 to 5×109/cm3 and Et=0.52 to 0.50 eV, respectively. Electron drift mobilities could not be determined due to low electron lifetimes. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 28 Jan 2010 09:41
Last Modified: 19 Sep 2010 05:51
URI: http://eprints.iisc.ac.in/id/eprint/24640

Actions (login required)

View Item View Item