Microwave modulation by amorphous-semiconductor switches

Bose, DN and Jani, BJ (1977) Microwave modulation by amorphous-semiconductor switches. In: Electronics Letters, 13 (16). 451 -452.

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Abstract

Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to siliconp¿i¿n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.

Item Type:	Journal Article
Publication:	Electronics Letters
Publisher:	IEEE
Additional Information:	Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	21 Jan 2010 05:09
Last Modified:	19 Sep 2010 05:50
URI:	http://eprints.iisc.ac.in/id/eprint/24426

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