ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Investigation of biferroic properties in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3â0.3PbTiO3 epitaxial bilayered heterostructures

Chaudhuri, Ayan Roy and Krupanidhi, SB and Mandal, P and Sundaresan, A (2009) Investigation of biferroic properties in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3â0.3PbTiO3 epitaxial bilayered heterostructures. In: Journal of Applied Physics, 106 (5).

[img] PDF
1.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: http://scitation.aip.org/getabs/servlet/GetabsServ...

Abstract

Epitaxial bilayered thin films consisting of La0.6Sr0.4MnO3 (LSMO) and 0.7Pb(Mg1/3Nb2/3)O3â0.3PbTiO3 (PMN-PT) layers of relatively different thicknesses were fabricated on LaNiO3 coated LaAlO3 (100) single crystal substrates by pulsed laser ablation technique. The crystallinity, ferroelectric, ferromagnetic, and magnetodielectric properties have been studied for all the bilayered heterostructures. Their microstructural analysis suggested possible StranskiâKrastanov type of growth mechanism in the present case. Ferroelectric and ferromagnetic characteristics of these bilayered heterostructures over a wide range of temperatures confirmed their biferroic nature. The magnetization and ferroelectric polarization of the bilayered heterostructures were enhanced with increasing PMN-PT layer thickness owing to the effect of lattice strain. In addition, evolution of the ferroelectric and ferromagnetic properties of these heterostructures with changing thicknesses of the PMN-PT and LSMO layers indicated possible influence of several interfacial effects such as space charge, depolarization field, domain wall pinning, and spin disorder on the observed properties. Dielectric properties of these heterostructures studied over a wide range of temperatures under different magnetic field strengths suggested a possible role of elastic strain mediated magnetoelectric coupling behind the observed magnetodielectric effect in addition to the influence of rearrangement of the interfacial charge carriers under an applied magnetic field.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copy right of this article belongs to American Institute of Physics.
Keywords: crystal microstructure;dielectric depolarisation; dielectric polarisation;electric domains;epitaxial layers; ferroelectric thin films;ferromagnetic materials;interface magnetism;lanthanum compounds;lead compounds;magnesium compounds;magnetic domain walls;magnetic thin films; magnetisation;multiferroics;pulsed laser eposition;space charge;strontium compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 16 Dec 2009 10:30
Last Modified: 19 Sep 2010 05:47
URI: http://eprints.iisc.ac.in/id/eprint/23827

Actions (login required)

View Item View Item