Photoimpedance characterization of polymer field-effect transistor

Sangeeth, CS Suchand and Jaiswal, Manu and Menon, Reghu (2009) Photoimpedance characterization of polymer field-effect transistor. In: Applied Physics Letters, 95 (9).

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Abstract

The small signal ac response is measured across the source-drain terminals of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistor under dc bias to obtain the equivalent circuit parameters in the dark, and under a monochromatic light (540 nm) of various intensities. The numerically simulated response based on these parameters shows deviation at low frequency which is related to the charge accumulation at the interface and the contact resistance at the electrodes. This method can be used to differentiate the photophysical phenomena occurring in the bulk from that at the metal-semiconductor interface for polymer field-effect transistors. ©2009 American Institute of Physics

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	16 Dec 2009 07:14
Last Modified:	19 Sep 2010 05:46
URI:	http://eprints.iisc.ac.in/id/eprint/23488

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