Properties of the gold related acceptor level in silicon

Kalyanaraman, V and Kumar, V (1982) Properties of the gold related acceptor level in silicon. In: Physica Status Solidi A, 70 (1). pp. 317-323.

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Abstract

The apparent thermal activation energy of 0.56 eV and the electron thermal capture cross section of 2.0 × 10-16 cm2 are measured for the gold related acceptor level in p+ nn+ silicon diodes by isothermal current transient and DLTS techniques. Using the emission and capture rate data and a degeneracy ratio of 2, the energy separation of the trap level from the conduction band is calculated and found to have the same temperature dependence as the band gap indicating that the acceptor level is pinned with respect to the valence band a t Ev + 0.637 eV.

Item Type:	Journal Article
Publication:	Physica Status Solidi A
Publisher:	John Wiley and Sons.
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	22 Dec 2009 06:37
Last Modified:	19 Sep 2010 05:45
URI:	http://eprints.iisc.ac.in/id/eprint/23292

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