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Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass

Parthasarathy, G and Bandyopadhyay, AK and Asokan, S and Gopal, ESR (1984) Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass. In: Solid State Communications, 51 (4). pp. 195-197.

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An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier Science
Additional Information: Copyright for this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 03 Sep 2009 10:36
Last Modified: 19 Sep 2010 05:43
URI: http://eprints.iisc.ac.in/id/eprint/22866

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