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Pressure-induced polymorphous crystallization in bulk Si20Te80 glass

Asokan, S and Gopal, ESR and Parthasarathy, G (1986) Pressure-induced polymorphous crystallization in bulk Si20Te80 glass. In: Journal of Materials Science, 21 (2). pp. 625-629.

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Official URL: http://dx.doi.org/10.1007/BF01145533


The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.

Item Type: Journal Article
Publication: Journal of Materials Science
Publisher: Springer
Additional Information: Copyright of this article belongs to Springer.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Jan 2010 06:49
Last Modified: 12 Sep 2013 05:37
URI: http://eprints.iisc.ac.in/id/eprint/22807

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