Asokan, S and Gopal, ESR and Parthasarathy, G (1986) Pressure-induced polymorphous crystallization in bulk Si20Te80 glass. In: Journal of Materials Science, 21 (2). pp. 625-629.
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Abstract
The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.
Item Type: | Journal Article |
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Publication: | Journal of Materials Science |
Publisher: | Springer |
Additional Information: | Copyright of this article belongs to Springer. |
Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 27 Jan 2010 06:49 |
Last Modified: | 12 Sep 2013 05:37 |
URI: | http://eprints.iisc.ac.in/id/eprint/22807 |
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