Dan, Surya Shankar and Mahapatra, Santanu (2009) Impact of Energy Quantization on the Performance of Current-Biased SET Circuits. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 (8). pp. 1562-1566.
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Abstract
The current-biased single electron transistor (SET) (CBS) is an integral part of almost all hybrid CMOS SET circuits. In this paper, for the first time, the effects of energy quantization on the performance of CBS-based circuits are studied through analytical modeling and Monte Carlo simulations. It is demonstrated that energy quantization has no impact on the gain of the CBS characteristics, although it changes the output voltage levels and oscillation periodicity. The effects of energy quantization are further studied for two circuits: negative differential resistance (NDR) and neuron cell, which use the CBS. A new model for the conductance of NDR characteristics is also formulated that includes the energy quantization term.
Item Type: | Journal Article |
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Publication: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Publisher: | IEEE |
Additional Information: | Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
Keywords: | Coulomb blockade;energy quantization; Monte Carlo technique;negative differential resistance (NDR);orthodox theory;single electron. transistor (SET) |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 25 Aug 2009 11:01 |
Last Modified: | 19 Sep 2010 05:41 |
URI: | http://eprints.iisc.ac.in/id/eprint/22272 |
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