Investigation of Deep Defects Due to -Particle Irradiation in n-Silicon

Indusekhar, H and Kumaran, V and Sengupta, D (1986) Investigation of Deep Defects Due to -Particle Irradiation in n-Silicon. In: Physica Status Solidi A, 93 (2). pp. 645-653.

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Abstract

Electrical properties of deep defects induced in n-silicon by -particles of about 10 MeV energy at a dose of 1014 and 1015 cm-2 are studied by DLTS. The levels at Ec -0.18 eV, Ec -0.26 eV, and Ec -0.48 eV are identified as A center, V2 (=/-) and V2 (-/0) on the basis of activation energy, electron capture cross section, and annealing behavior. Two other irradiation related levels at Ec -0.28 eV and Ec -0.51 eV could not be related to any known center.

Item Type:	Journal Article
Publication:	Physica Status Solidi A
Publisher:	John Wiley and Sons
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics
Date Deposited:	26 Aug 2009 18:32
Last Modified:	19 Sep 2010 05:41
URI:	http://eprints.iisc.ac.in/id/eprint/22207

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