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Pressure induced effects in bulk amorphous n-type semiconductors(GeSe3.5)100âxBix

Bhatia, KL and Parthasarathy, G and Gopal, ESR (1985) Pressure induced effects in bulk amorphous n-type semiconductors(GeSe3.5)100âxBix. In: Journal of Non-Crystalline Solids, 69 (2-3). pp. 189-202.

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The effect of pressure on the electrical resistivity of amorphous n-type (GeSe3.5)100�xBix been studied in a Bridgeman anvil system up to a pressure of 90 kbar down to liquid nitrogen temperature. A continuous amorphous semiconductor to metal-like solid transition in the undoped GeSe3.5 is observed at room temperature. Incorporation of Bi in the GeSe3.5 network is found to significantly disturb the behaviour of the resistivity with pressure. With increasing Bi concentration a much broader variation in resistivity with pressure is observed. The temperature dependence of the resistivity and activation energy at different pressures is also measured and they are found to be composition dependent. Results are discussed in the light of the Phillips Model of ordered clusters in chalcogenide semiconductors.

Item Type: Journal Article
Publication: Journal of Non-Crystalline Solids
Publisher: Elsevier Science
Additional Information: The copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 30 Nov 2009 09:01
Last Modified: 19 Sep 2010 05:40
URI: http://eprints.iisc.ac.in/id/eprint/22126

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