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Pressure-induced electronic and structural transformations in bulk gese2 glass

Prasad, MVN and Parthasarathy, G and Gopal, ESR and Asokan, S (1984) Pressure-induced electronic and structural transformations in bulk gese2 glass. In: Pramana, 23 (1). pp. 31-37.

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The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using he x-ray diffractometer and is found to be crystalline, with a face-centered cubic structure having a =4.06A. The electrical conductivity has also been studied as a function of temperature at various pressures.

Item Type: Journal Article
Publication: Pramana
Publisher: Indian Academy of Sciences
Additional Information: Copyright for this article belongs to Indian Academy of Sciences.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 01 Feb 2010 09:24
Last Modified: 19 Sep 2010 05:39
URI: http://eprints.iisc.ac.in/id/eprint/21921

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