Prasad, MVN and Parthasarathy, G and Gopal, ESR and Asokan, S (1984) Pressure-induced electronic and structural transformations in bulk gese2 glass. In: Pramana, 23 (1). pp. 31-37.
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Abstract
The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using he x-ray diffractometer and is found to be crystalline, with a face-centered cubic structure having a =4.06A. The electrical conductivity has also been studied as a function of temperature at various pressures.
| Item Type: | Journal Article |
|---|---|
| Publication: | Pramana |
| Publisher: | Indian Academy of Sciences |
| Additional Information: | Copyright for this article belongs to Indian Academy of Sciences. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 01 Feb 2010 09:24 |
| Last Modified: | 19 Sep 2010 05:39 |
| URI: | http://eprints.iisc.ac.in/id/eprint/21921 |
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