Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure

Parthasarathy, G and Asokan, S and Titus, SSK and Krishna, RR (1988) Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure. In: Physics Letters A, 131 (7-8). pp. 441-444.

PDF pdf.pdf - Published Version Restricted to Registered users only Download (249kB) | Request a copy

Abstract

Pressure and temperature dependence of the electrical resistivity of amorphous Ga20Te80 alloy is reported for the first time. The alloy undergoes a pressure induced amorphous semiconductor-to-crystalline metal phase transition at 6.5 ± 0.5 GPa. The high pressure crystalline phase is a mixture of Te and GaTe3 phases.

Item Type:	Journal Article
Publication:	Physics Letters A
Publisher:	Elsevier Science
Additional Information:	Copy rights of this article belongs to Elsevier Science.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	01 Feb 2010 09:38
Last Modified:	19 Sep 2010 05:39
URI:	http://eprints.iisc.ac.in/id/eprint/21894

Actions (login required)

View Item