Origin of anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films

Harshavardhan, Solomon K and Hegde, MS (1987) Origin of anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films. In: Physical Review Letters, 58 (6). 567- 570.

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Abstract

Anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films are established as being due to photochemical modification of the surfaces, by photoemission studies. Mass measurements indicate that the giant thickness reduction on irradiation is predominantly due to the loss of material as a result of photogenerated volatile high vapor pressure oxide fractions on the surface. This extrinsic contribution contradicts the models of the phenomenon proposed so far, which are based purely on intrinsic structural transformations.

Item Type:	Journal Article
Publication:	Physical Review Letters
Publisher:	The American Physical Society.
Additional Information:	Copy right of this article belongs to The American Physical Society.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	19 Jan 2010 06:33
Last Modified:	18 Feb 2013 09:47
URI:	http://eprints.iisc.ac.in/id/eprint/21757

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