Minority-Carrier Lifetime In Polycrystalline Semiconductors

Kumar, KR and Satyam, M (1983) Minority-Carrier Lifetime In Polycrystalline Semiconductors. In: Physica Status Solidi A, 77 (2). pp. 467-470.

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Abstract

A model is described for grain boundary recombination in polycrystalline semiconductors. This model enables the evaluation of minority carrier lifetime in these materials. Es vvird ein Modell fur die Korngrenzenrekombination in polykristallinen Halbleitern beschrieben. Das Modell ermoglicht die Bestimmung der Minoritiitsladungstragerlebensdauer in diesen Materialien.

Item Type:	Journal Article
Publication:	Physica Status Solidi A
Publisher:	John Wiley and Sons
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	03 Feb 2010 10:36
Last Modified:	19 Sep 2010 05:37
URI:	http://eprints.iisc.ac.in/id/eprint/21392

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