Electrical transport and crystallization studies of glassy semiconducting Si20Te80 alloy at high pressure

Asokan, S and Parthasarathy, G and Subbanna, G N and Gopal, E S R (1986) Electrical transport and crystallization studies of glassy semiconducting Si20Te80 alloy at high pressure. In: Journal of Physics and Chemistry of Solids, 47 (4). 341 -348.

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Abstract

The effect of pressure on the electrical resistivity of bulk Si20Te80 glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si20Te80 glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si20Te80 glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double Tg effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed.

Item Type:	Journal Article
Publication:	Journal of Physics and Chemistry of Solids
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	high pressure effects in solids;chalcogenide glasses;pressure induced transition;crystallization of glasses;transport properties.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics
Date Deposited:	15 Jul 2009 08:11
Last Modified:	19 Sep 2010 05:36
URI:	http://eprints.iisc.ac.in/id/eprint/21262

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